thru 1 0 a m p s cho t t k y b a r r i er r e c t if ie r features maximum ratings operating temperature: - 5 5 c to +1 5 0 c storage temperature: - 5 5 c to +1 75 c microsemi catalog number device marking maximum re current peak reverse voltage maximum rms voltage maximum dc blocking voltage mcc
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a . 56 0 .625 14.22 15.88 b . 3 8 0 . 42 0 9.65 10.67 c . 10 0 .135 2.54 3.43 d . 23 0 .270 5.84 6.86 e .380 .420 9.65 10.67 f ------ .250 ------ 6.35 g .500 .580 12.70 14.73 h .090 .110 2.29 2.79 i . 02 0 .045 0.51 1.14 j .012 .025 0.30 0.64 k .139 .161 3.53 4.09 l .140 .190 3.56 4.83 m .045 .055 1.14 1.40 n .080 .115 2.03 2.92 pin 1 pin 3 pin 2 case a b c k j i h g f e d n m l h to - 22 0a b pin 13 2 maximum forward voltage drop per element maximum dc reverse current at rated dc blocking voltage *pulse test: pulse width 300 m sec, duty cycle 2 % www. mccsemi .com m e ta l o f s il i co n re c t i f ie r , ma j on ty c a rr ie r c on d u c to n g u a rd r i n g fo r t ra n si e nt p ro te c t ion l o w po w er lo ss hi g h e ff ic i en cy h ig h s u r g e ca p a c i ty , h i g h cu rr en t ca p a b i l i ty 8 0 - 10 0 volts t j = 1 25 c peak forward surge current i fsm 1 2 0 a 8.3ms, half sine 15 m a 0.2m a t j = 25 c v f . 85 v . 75 v m b r 1 0 10 0 c t m b r 1 0 10 0 ct 10 0 v 70 v 100 v m b r 1 0 8 0 c t m b r 1 0 8 0 ct 8 0 v 56 v 8 0 v m b r 10 8 0 ct m b r 10 10 0 ct electrical characteristics @ 25 c unless otherwise specified average forward current i f(av) 1 0 a t c = 100 c t j = 1 2 5 c i fm = 5 a t j = 25 c typical junction capacitance 30 0 p f c j mea s u r ed at 1.0mhz, v r =4.0v i r
rating and characteristic curves m b r 1 0 8 0 c t th ru mbr 10 100 ct fig.2 - maximum non-repetitive surge current number of cycles at 60hz peak forward surge current, amperes 1 5 10 50 100 2 20 0 25 50 75 100 1 2 0 1 4 0 fig.1 - forward current derating curve average forward current amperes 25 75 100 125 150 4 0 50 16 175 percent of rated peak reverse voltage ,(%) fig.3 - typical reverse characteristics instantaneous reverse current ,(ma) 20 40 120 140 0.001 0.1 1.0 100 10 60 80 100 0.01 t j = 25 c 8.3ms single half-sine-wave (jedec method) 12 0 8 resistive or inductive load instantaneous forward voltage , volts fig.4 - typical forward characteristics instantaneous forward current ,(a) 0.2 0.3 0.7 0.8 1.0 10 100 0.4 0 .5 0.6 0.1 1.0 0.9 instantaneous forward voltage , volts instantaneous forward current ,(a) 0.1 1.0 10 100 0.1 pulse width 300us 2% duty cycle t j = 25 c case temperature , c 0 ww w . mccsemi .com mcc fig.5 - typical junction capacitance capacitance , (pf) reverse voltage , volts 10 1 100 1000 100 10 0.1 4 t j = 25 c, f= 1mhz
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